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? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters ? hermetic ? surface mount features description these ultrafast,soft recovery diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode fred
hfa40hf120 www.irf.com 1 parameter max. units v r cathode to anode voltage 1200 v i f(av) continuous forward current, t c = 100c 11 i fsm single pulse forward current, t c = 25c 190 p d @ t c = 25c maximum power dissipation 83 w t j, t stg operating junction and storage temperature range -55 to +150 c ! absolute maximum ratings case style smd-1 v r = 1200v v f = 3.1v q rr = 510nc di (rec)m /dt = 350a/s anode cathode (isolated base) pd-20376b
2 www.irf.com hfa40hf120 electrical characteristics @ t j = 25c (unless otherwise specified) dynamic recovery characteristics @ t j = 25c (unless otherwise specified) thermal - mechanical characteristics parameter typ. max. units r thjc junction-to-case ? 1.5 wt weight 2.6 ? g c/w !"
! parameter min. typ. max. units test conditions t rr1 reverse recovery time ? 80 120 ns t j = 25c see fig. t rr2 ? 130 195 t j = 125c 5 i f = 11a i rrm1 peak recovery current ? 7.25 10.9 t j = 25c see fig. i rrm2 ? 10.2 15.3 t j = 125c 6 v r = 200v q rr1 reverse recovery charge ? 340 510 t j = 25c see fig. q rr2 ? 825 1240 t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ? 230 350 t j = 25c see fig. di (rec)m /dt2 during t b ? 160 240 t j = 125c 8 parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 1200 ? ? v i r = 100a v f forward voltage ? ? 3.2 i f = 11a t j = -55c see fig. 1 ? ? 3.1 v i f = 11a ? ? 4.0 i f = 22a ? ? 2.7 i f = 11a, t j = 125c i r max reverse leakage current ? ? 10 a v r = v r rated see fig. 2 ? ? 1.0 ma v r = 960v, t j = 125c c t junction capacitance, see fig. 3 ? 28 42 pf v r = 200v l s series inductance ? 5.9 ? nh measured from center of cathode pad the center of anode pad
www.irf.com 3 hfa40hf120 fig. 4 - maximum thermal impedance z thjc characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - typical forward voltage drop vs. instantaneous forward current 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 0.001 0.01 0.1 1 10 100 1000 10000 0 300 600 900 1200 r r reverse voltage - v (v) t = 150c reverse current - i (a) t = 125c j j t = 25c j t = -55c j 10 100 1000 1 10 100 1000 t = 25c j reverse voltage - v (v) r t junction capacitance - c (pf) a 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 forward voltage drop - v f (v) 1 10 100 i n s t a n t a n e o u s f o r w a r d c u r r e n t - i f ( a ) tj = -55c tj = 125c tj = 25c
4 www.irf.com hfa40hf120 fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 5 - typical reverse recovery vs. di f /dt, fig. 6 - typical recovery current vs. di f /dt, #$ % !& 0 50 100 150 200 250 100 1000 trr - (ns) f di /dt - (a/s) v = 200v t = 125c t = 25c r j j i = 22a i = 11a i = 5.5a f f f 1 10 100 100 1000 f di /dt - (a/s) i = 22a i = 11a i = 5.5a f f f v = 200v t = 125c t = 25c r j j 100 1000 10000 100 1000 f di /dt - (a/s) rr q - (nc) i = 22a i = 11a i = 5.5a f f f v = 200v t = 125c t = 25c r j j 10 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 11a i = 5.5a i = 22a f f f v = 200v t = 125c t = 25c r j j
www.irf.com 5 hfa40hf120

fig. 10 - reverse recovery waveformand definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f
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reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust case outline and dimensions ? smd-1 ir world headquarters: 101 n. sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 04/2015 1 = cathode 2 = anode 3 = n / c pad assignments

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